The Economic Information Daily reported on the 13th that memory chip stocks came under broad pressure. GigaDevice (03986) fell 4.6%, closing at HK$358.2. XL Two Southern SK Hynix (07709) dropped 17%, to HK$26.42, while XL Two Samsung (07747) declined 15.2%, to HK$56.58.
After ChangXin Memory Technologies (CXMT) announced a key advancement in its 4F^2 DRAM architecture development, market concerns intensified over increased industry competition, dragging down memory-related stocks. Micron (US.MU) fell 3.9% on Monday, SK Hynix (US.SKHY) dropped 4%, and SanDisk (US.SNDK) also declined nearly 6%.
Cao Kan-Yu, President of CXMT, disclosed at the 4th Integrated Chip and Chiplet Conference that the core of this architecture is the self-developed VSG (Vertical Surrounded Gate) transistor, which adopts a vertically surrounded channel structure to enhance gate control, suppress leakage and short-channel effects, and support scaling down of memory cell area. Compared to the current industry mainstream 6F^2 architecture, 4F^2 represents a reduction of approximately 33% in memory cell area, allowing more memory cells to be integrated per wafer and improving storage density.
The company has already disclosed over 300 4F^2 patent families and expects to launch a new generation of DDR5 RDIMM products incorporating the 4F^2 architecture by the end of this year.
Currently, the Hang Seng Index stands at 24,098, down 172 points or 0.7%, with turnover on the main board exceeding HK$54.4 billion. The H-share Index is at 8,099, down 68 points or 0.8%. The Hang Seng Tech Index is at 4,090, down 78 points or 1.9%. (nw)
After ChangXin Memory Technologies (CXMT) announced a key advancement in its 4F^2 DRAM architecture development, market concerns intensified over increased industry competition, dragging down memory-related stocks. Micron (US.MU) fell 3.9% on Monday, SK Hynix (US.SKHY) dropped 4%, and SanDisk (US.SNDK) also declined nearly 6%.
Cao Kan-Yu, President of CXMT, disclosed at the 4th Integrated Chip and Chiplet Conference that the core of this architecture is the self-developed VSG (Vertical Surrounded Gate) transistor, which adopts a vertically surrounded channel structure to enhance gate control, suppress leakage and short-channel effects, and support scaling down of memory cell area. Compared to the current industry mainstream 6F^2 architecture, 4F^2 represents a reduction of approximately 33% in memory cell area, allowing more memory cells to be integrated per wafer and improving storage density.
The company has already disclosed over 300 4F^2 patent families and expects to launch a new generation of DDR5 RDIMM products incorporating the 4F^2 architecture by the end of this year.
Currently, the Hang Seng Index stands at 24,098, down 172 points or 0.7%, with turnover on the main board exceeding HK$54.4 billion. The H-share Index is at 8,099, down 68 points or 0.8%. The Hang Seng Tech Index is at 4,090, down 78 points or 1.9%. (nw)
